Increased efficiency of current induced motion of chiral domain walls by interface engineering
AssigneeMax-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
InventorsYicheng GUAN, Tianping MA, Robin BLAESING, Stuart S.P. PARKIN
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Abstract
The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device) that includes a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the basic racetrack device structure.
Claims25
A magnetic domain wall displacement type memory cell or racetrack memory device comprising a 4d or 5d metal dusting layer (DL) at a ferromagnetic/heavy metal interface of a ferromagnetic (FM) structure or a synthetic antiferromagnetic (SAF) structure of a basic racetrack device structure.
Method for reducing the threshold current densities and increasing the efficiency of domain wall motion in racetrack memory devices comprising introducing a 4d- or 5d-metal dusting layer (DL) at the ferromagnetic/heavy metal (HM) interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the racetrack memory device.
Dependencies are inferred from the claim text.