Embedded magnetoresistive random access memory top electrode structure

An array of pillar-type memory devices, the array of pillar-type memory devices comprising:

• a plurality of pillar-type memory devices in an array, wherein each of the pillar-type memory devices has a semi-spherical-like bump of a conductive material on a top electrode of each of the pillar type-memory devices in the array;
• an encapsulation dielectric material covers a sidewall of each of the plurality of memory devices in the array and is not over the semi-spherical bump the conductive material;
• a self-leveling dielectric material between bottom portions of the encapsulation material;
• and
• an interlayer dielectric material is over the self-leveling dielectric material and between the semi-spherical-like bump of the conductive material on the top electrode of the pillar type-memory devices.

An array of pillar-type memory devices, the array of pillar-type memory devices comprising:

• a plurality of pillar-type memory devices in an array, wherein each of the pillar-type memory devices in an array of pillar-type memory devices has a bump of a conductive material on a top electrode of each of the pillar type-memory devices in the array of pillar-type memory devices;
• a first encapsulation dielectric material covers a sidewall each of the plurality of memory devices in the array of pillar-type memory devices;
• a second encapsulation material is over the first encapsulation material and a bottom portion of the bump of the conductive material;
• and
• an interlayer dielectric material over the second encapsulation material and between the bump of a conductive material on a top electrode of the pillar type-memory devices.

A method of forming a pillar-type memory device in an array of pillar-type memory devices, the method comprising:

• depositing a plurality of layers of materials for forming a pillar for each of a plurality of pillar-type memory devices, wherein a layer of a top electrode material in the plurality of layers of materials forming the pillar is a thin layer of the top electrode material;
• patterning the top electrode material;
• using an ion beam etch to form each pillar of the plurality of pillar-type memory devices from a plurality of layers of materials;
• depositing a layer of an encapsulation material;
• etching back the layer of the encapsulation material to expose a top surface of the top electrode material;
• and
• selectively depositing one of a high melting point metal or a metal nitride material on the exposed top surface of the top electrode material to form a conductive bump on the top electrode material.

A method of forming a pillar-type memory device in an array of pillar-type memory devices, the method comprising:

• depositing a plurality of layers of materials for forming a pillar for a plurality of pillar-type memory devices in an array of pillar-type devices, wherein a layer of a top electrode material in a plurality of layers of material is a thin layer of the top electrode material;
• patterning the top electrode material;
• using an ion beam etch to form each pillar of the plurality of pillar-type memory devices from a plurality of layers of materials;
• depositing a layer of a first encapsulation material;
• etching back the layer of the first encapsulation material to expose a top surface of the top electrode material;
• selectively depositing one of a high melting point metal or a metal nitride material on the exposed top surface of the top electrode material to form a conductive bump on the top electrode material;
• depositing a layer of a second encapsulation material over the first encapsulation material, over an exposed portion of a dielectric material between each pillar of the plurality of pillar-type memory devices, and surrounding a bottom portion of the conductive bump on the top electrode;
• etching back the layer of the second encapsulation material to expose a top surface of the conductive bump;
• and
• depositing an interlayer dielectric material over exposed surfaces of the conductive bump, the second encapsulation material, and the dielectric material between each pillar of the plurality of pillar-type memory devices.