Power Transistor IC with Thermocouple Having p-Thermopile and n-Thermopile

An integrated circuit, comprising:

• a transistor formed in or over a semiconductor substrate and having a plurality of layers including at least one p-type layer and at least one n-type layer;
• and
• a thermocouple comprising a p-thermopile and an n-thermopile that are each electrically isolated from the transistor and located adjacent the transistor, wherein:
• the p-thermopile comprises a p-type thermoelectric body formed in a p-type one or more of the plurality of layers;
• and
• the n-thermopile comprises an n-type thermoelectric body formed in an n-type one or more of the plurality of layers.

A method of manufacturing an integrated circuit, comprising:

• forming an array of transistors in or over a semiconductor substrate;
• forming a plurality of thermocouples within the array, each thermocouple electrically isolated from the transistors and the semiconductor substrate and from others of the thermocouples;
• and
• configuring the thermocouples to provide an electrical signal responsive to heat flow from an interior portion of the array to a peripheral portion of the array.