Quantum dots light emitting diode, display apparatus, and method of fabricating quantum dots light emitting diode

A quantum dots light emitting diode, comprising:

• a first electrode layer;
• an electron transport layer on the first electrode layer;
• and
• a quantum dots layer on a side of the electron transport layer away from the first electrode layer;
• and
• wherein the electron transport layer comprises a gradient alloy composite sub-layer comprising an electron transport oxide material and an electron transport non-oxide chalcogen-containing material;
• the non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion;
• and
• the electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

A method of fabricating a quantum dots light emitting diode, comprising:

• providing a first electrode layer;
• forming an electron transport layer on the first electrode layer;
• and
• forming a quantum dots layer on a side of the electron transport layer away from the first electrode layer;
• wherein forming the electron transport layer comprises forming a gradient alloy composite sub-layer comprising an electron transport oxide material and an electron transport non-oxide chalcogen-containing material;
• the non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion;
• and
• the electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.