Bulk acoustic wave resonator and fabrication method therefor
AssigneeSuzhou Huntersun Electronics Co., Ltd.
InventorsWu MING, Tang ZHAOYUN, Yang QINGHUA, Lai ZHIGUO, Wang JIAYOU
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AssigneeSuzhou Huntersun Electronics Co., Ltd.
InventorsWu MING, Tang ZHAOYUN, Yang QINGHUA, Lai ZHIGUO, Wang JIAYOU
Estimating the term…
A BAW resonator includes: a piezoelectric film array, including multiple piezoelectric films between a substrate of a chip and a capping layer on the top, where multiple first cavities are provided between adjacent piezoelectric films in a vertical direction, between the piezoelectric films and the capping layer, and between the piezoelectric films and the substrate, second cavities are shared between adjacent piezoelectric films in a first direction in a horizontal plane, and third cavities are shared between adjacent piezoelectric films in a second direction in the horizontal plane; multiple electrode layers, covering at least the top surface and bottom surface of each of the piezoelectric films; and multiple electrode interconnection layers, connected to the electrode layers on the bottom surfaces of the piezoelectric films along sidewalls of the third cavities.
A bulk acoustic wave (BAW) resonator, comprising:
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A method for producing a bulk acoustic wave (BAW) resonator, comprising:
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Dependencies are inferred from the claim text.