Deep ultraviolet light-emitting diode

A deep UV light emitting diode, comprising:

• a substrate;
• an n-type semiconductor layer disposed on the substrate;
• a mesa disposed on the n-type semiconductor layer, including an active layer and a p-type semiconductor layer, and having a plurality of via holes exposing the n-type semiconductor layer;
• n-ohmic contact layers contacting the n-type semiconductor layer in the via holes;
• a p-ohmic contact layer contacting the p-type semiconductor layer;
• an n-bump electrically connected to the n ohmic contact layers;
• and
• a p-bump electrically connected to the p ohmic contact layer,
• wherein the p-ohmic contact layer includes Ni/Rh.

A deep UV light emitting diode, comprising:

• a substrate;
• an n-type semiconductor layer disposed on the substrate;
• a mesa disposed on the n-type semiconductor layer, including an active layer and a p-type semiconductor layer, and including a groove exposing the n-type semiconductor layer;
• n-ohmic contact layers contacting the n-type semiconductor layer in the groove;
• a p-ohmic contact layer contacting the p-type semiconductor layer;
• an n-pad metal layer electrically connected to the n-ohmic contact layers;
• a p-pad metal layer electrically connected to the p-ohmic contact layer;
• an n-bump electrically connected to the n-pad metal layer;
• and
• a p-bump electrically connected to the p-pad metal layer.