Semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate, a plurality of IGBTs (Insulated Gate Bipolar Transistors) formed on the semiconductor substrate), a gate electrode, a plurality of gate wires coupled to the gates of the IGBTs, and a gate resistor coupled to the gate electrode and the plurality of gate wires, wherein the gate resistor comprises a resistive element, a first contact that couples the gate electrode and the resistive element, and a plurality of second contacts each of which corresponds to each of the plurality of gate wires and couples to the resistive element and the corresponding gate wire, respectively, and wherein each of the plurality of second contacts is formed at a different distance from the first contact.

Dependencies are inferred from the claim text.