Semiconductor structure and method of forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Cheng Kung University
InventorsTE-MING KUNG, YING-LANG WANG, KEI-WEI CHEN, WEN-HSI LEE, SHU WEI CHANG
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Abstract
A method of forming a semiconductor structure includes following operations. A substrate including a silicon (Si) layer is received. An amorphous germanium (Ge) layer is formed on the Si layer. A barrier layer is formed over the amorphous Ge layer. The substrate is annealed to transform the Si layer and the Ge layer to form a single crystalline SiGe layer. A Ge concentration is in a positive correlation with a ratio of a thickness of the Ge layer and a thickness of the Si layer.
Claims20
A method of forming a semiconductor structure, comprising:
- receiving a substrate comprising at least a silicon (Si) layer;
- forming an amorphous germanium (Ge) layer on the Si layer;
- forming a barrier layer over the amorphous Ge layer;
- and
- annealing the substrate to transform the Si layer and the Ge layer to form a single crystalline silicon germanium (SiGe) layer,
- wherein a germanium concentration has a positive correlation with a ratio of a thickness of the germanium layer to a thickness of the silicon layer.
A method of forming a semiconductor structure, comprising:
- receiving a substrate, wherein at least a dielectric layer, a first semiconductor layer, a second semiconductor layer and a barrier layer are formed over the substrate, the first semiconductor layer comprises a first semiconductor material, and the second semiconductor layer comprises a second semiconductor material different from the first semiconductor material;
- annealing the substrate to form a third semiconductor layer comprising the first semiconductor material and the second semiconductor material;
- removing the barrier layer;
- patterning the third semiconductor layer to form at least a nanowire;
- removing a portion of the dielectric layer to form a trench, wherein the nanowire is suspended over the trench;
- and
- forming a gate structure in the trench and surrounding a first portion of the nanowire and exposing a second portion of the nanowire.
A semiconductor structure, comprising:
- a substrate comprising at least a dielectric layer disposed thereon;
- a nanowire disposed over the substrate, wherein the nanowire has a first portion and a second portion, the first portion of the nanowire comprises a first semiconductor layer and a second semiconductor layer surrounded by the first semiconductor layer, the second portion comprises the second semiconductor layer;
- a metal gate electrode layer surrounding the first portion of the nanowire;
- and
- a gate dielectric layer disposed between the metal gate electrode layer and the nanowire.
Dependencies are inferred from the claim text.