Pin diode including a conductive layer, and fabrication process
AssigneeSTMicroelectronics (Rousset) SAS
InventorPascal FORNARA
Life of this patent
Estimating the term…
Abstract
A PIN diode includes a first polycrystalline silicon region doped with a P-type of conductivity, a second polycrystalline silicon region doped with an N-type of conductivity and an intrinsic polycrystalline silicon region. At least the intrinsic polycrystalline silicon region is configured to include fluorine atoms. A polycrystalline silicon bar may include the first polycrystalline silicon region, the second polycrystalline silicon region and the intrinsic polycrystalline silicon region. The polycrystalline silicon bar may be supported by an insulating region within a semiconductor substrate.
Claims16
A diode, comprising:
- a first polycrystalline silicon region doped with a first type of conductivity;
- a second polycrystalline silicon region doped with a second type of conductivity;
- and
- an intrinsic polycrystalline silicon region, located between and in contact with the first region and the second region;
- wherein the intrinsic polycrystalline silicon region includes fluorine atoms.
A process for fabricating a diode, comprising:
- implanting dopants of a first type of conductivity in a first polycrystalline silicon region;
- implanting dopants of a second type of conductivity in a second polycrystalline silicon region;
- and
- implanting fluorine atoms in an intrinsic polycrystalline silicon region located between and in contact with the first polycrystalline silicon region and the second polycrystalline silicon region.
Dependencies are inferred from the claim text.