Thin-film led array with low refractive index patterned structures

A method of manufacturing, comprising:

• depositing a nucleation layer on a substrate, the nucleation layer comprising a first III-nitride material;
• depositing a dielectric layer on a top surface of the nucleation layer, the dielectric layer comprising a low refractive index dielectric material;
• patterning the dielectric layer to form a patterned surface having a first plurality of features, a second plurality of features adjacent the first plurality of features, and having a plurality of spaces between the first plurality of features and the second plurality of features, the first plurality of features and the second plurality of features protruding from a top surface of the nucleation layer, the second plurality of features having a second height and a second width greater than a first height and a first width of the first plurality of features, and the plurality of spaces exposing a top surface of the nucleation layer;
• epitaxially growing a III-nitride layer on the patterned surface, the III-nitride layer comprising a second III-nitride material;
• and
• forming a metal contact aligned with and directly contacting the second plurality of features.