Solid-state image-capturing device, semiconductor apparatus, electronic apparatus, and manufacturing method

A semiconductor apparatus, comprising:

• a plurality of through electrodes electrically connected respectively to a plurality of electrode pads, wherein the plurality of electrode pads is on a second main plane side of a semiconductor substrate from a first main plane side of the semiconductor substrate;
• and
• a through electrode wiring from the plurality of electrode pads to the first main plane side corresponding to the plurality of through electrodes, wherein
• the through electrode wiring includes an insulation film, a barrier metal layer, a plating seed layer, and a rewiring layer in an order.

An electronic apparatus, comprising:

• a solid-state image-capturing device that includes:
• a plurality of through electrodes electrically connected respectively to a plurality of electrode pads, wherein the plurality of electrode pads is on a second main plane side of a semiconductor substrate from a first main plane side of the semiconductor substrate;
• and
• a through electrode wiring from the electrode pads to the first main plane side corresponding to the plurality of through electrodes, wherein
• the through electrode wiring includes an insulation film, a barrier metal layer, a plating seed layer, and a rewiring layer in an order.

A manufacturing method, comprising:

• forming a through electrode formation region, wherein a plurality of through electrodes electrically connected respectively to a plurality of electrode pads provided on a second main plane side from a first main plane side of a semiconductor substrate is formed in the through electrode formation region;
• and
• forming a through electrode wiring from the electrode pads to the first main plane side corresponding to the plurality of through electrodes, wherein
• the through electrode wiring includes an insulation film, a barrier metal layer, a plating seed layer, and a rewiring layer in an order.