Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

A display comprising:

• a substrate;
• a buffer layer formed over the substrate;
• thin-film transistor structures, wherein the buffer layer is interposed between the substrate and the thin-film transistor structures, wherein the thin-film transistor structures include a silicon transistor and an oxide transistor, wherein the silicon transistor comprises a polysilicon channel and a first gate, wherein the polysilicon channel is interposed between the buffer layer and the first gate, wherein the oxide transistor comprises a semiconducting oxide layer and a second gate, and wherein the semiconducting oxide layer is interposed between the buffer layer and the second gate;
• and
• a light shield that is interposed between the substrate and the buffer layer, wherein the light shield overlaps at least one of the silicon transistor and the oxide transistor.

A display having an array of pixels, the display comprising:

• a substrate;
• thin-film transistor structures for the array of pixels, wherein the thin-film transistor structures include a silicon transistor and an oxide transistor, wherein the silicon transistor comprises a polysilicon channel and a first gate, wherein the oxide transistor comprises a semiconducting oxide layer and a second gate;
• a light shield that is interposed between the substrate and at least one of the silicon transistor and the oxide transistor;
• a buffer layer formed between the substrate and the thin-film transistor structures;
• an electrode that is electrically connected to the semiconducting oxide layer;
• and
• at least one dielectric layer that is interposed between the electrode and the semiconducting oxide layer, wherein the at least one dielectric layer comprises a first dielectric layer and a second dielectric layer and wherein a layer of metal is interposed between the first dielectric layer and the second dielectric layer.