Display panel and display device
AssigneeWuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorSihang Bai
Life of this patent
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Abstract
A display panel and a display device are provided. By manufacturing a first via hole and a second via hole first, and then manufacturing a third via hole and a fourth via hole, the first via hole and the second via hole have been covered by a corresponding first drain electrode and first source electrode before performing hydrofluoric acid cleaning processes, and a first drain region and a first source region of a first oxide transistor are not affected by the hydrofluoric acid cleaning process, thereby allowing an oxide channel of the first oxide transistor to also be prevented from being affected.
Claims20
A display panel, comprising:
- a first oxide transistor, wherein the first oxide transistor comprises a first oxide active layer, the first oxide active layer comprises a first drain region, a first source region, and a first oxide channel, and the first oxide channel is located between the first drain region and the first source region;
- a first conductive layer, wherein the first conductive layer comprises a first drain electrode and a first source electrode, the first drain electrode is connected to the first drain region through a first via hole, and the first source electrode is connected to the first source region through a second via hole;
- a first polycrystalline silicon transistor, wherein the first polycrystalline silicon transistor comprises a first polycrystalline silicon active layer, and the first polycrystalline silicon active layer comprises a second drain region and a second source region;
- and
- a second conductive layer, wherein the second conductive layer comprises a second drain electrode and a second source electrode, the second drain electrode is connected to the second drain region through a third via hole, and the second source electrode is connected to the second source region through a fourth via hole, and
- wherein the second conductive layer is located on a side of the first polycrystalline silicon active layer, the first conductive layer is located between the first polycrystalline silicon active layer and the second conductive layer, and the first oxide active layer is located between the first polycrystalline silicon active layer and the first conductive layer.
A display panel, comprising:
- a first oxide transistor, wherein the first oxide transistor comprises a first oxide active layer, the first oxide active layer comprises a first drain region and a first source region;
- a first conductive layer, wherein the first conductive layer comprises a first drain electrode and a first source electrode, the first drain electrode is connected to the first drain region through a first via hole, and the first source electrode is connected to the first source region through a second via hole;
- a first polycrystalline silicon transistor, wherein the first polycrystalline silicon transistor comprises a first polycrystalline silicon active layer, and the first polycrystalline silicon active layer comprises a second drain region and a second source region;
- and
- a second conductive layer, wherein the second conductive layer comprises a second drain electrode and a second source electrode, the second drain electrode is connected to the second drain region through a third via hole, and the second source electrode is connected to the second source region through a fourth via hole, and
- wherein the second conductive layer is located on a side of the first polycrystalline silicon active layer, the first conductive layer is located between the first polycrystalline silicon active layer and the second conductive layer, and the first oxide active layer is located between the first polycrystalline silicon active layer and the first conductive layer.
Dependencies are inferred from the claim text.