Fin field-effect transistor and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTe-Hsin Chiu, Kam-Tou Sio, Jiann-Tyng Tzeng
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate. The semiconductor device includes a first fin protruding from the semiconductor substrate and extending along a first direction. The semiconductor device includes a second fin protruding from the semiconductor substrate and extending along the first direction. A first epitaxial source/drain region coupled to the first fin and a second epitaxial source/drain region coupled to the second fin are laterally spaced apart from each other by an air void.
Claims20
A method of forming a semiconductor device, comprising:
- forming a first semiconductor fin and a second semiconductor fin over a substrate, the first and second semiconductor fins both extending along a first direction;
- forming a dielectric fin also extending along the first direction, the dielectric fin disposed between the first and second semiconductor fins;
- forming a first source/drain region connected to the first semiconductor fin along the first direction;
- forming and a second source/drain region connected to the second semiconductor fin along the first direction;
- removing the dielectric fin to form a trench extending along the first direction and between the first and second semiconductor fins;
- and
- depositing a protection layer over the trench to form an air void separating the first source/drain region from the second pairs of source/drain region along a second direction perpendicular to the first direction.
A method of forming a semiconductor device, comprising:
- forming a first semiconductor fin and a second semiconductor fin over a substrate, the first and second semiconductor fins both extending along a first direction;
- forming a dielectric fin also extending along the first direction, the dielectric fin disposed between the first and second semiconductor fins;
- removing the dielectric fin to form a trench extending along the first direction and between the first and second semiconductor fins;
- and
- depositing a protection layer over the trench to form an air void that partially extends into the substrate.
A method of forming a semiconductor device, comprising:
- forming a first semiconductor fin and a second semiconductor fin on a first side of a substrate, the first and second semiconductor fins extending along a first direction;
- forming a dielectric fin also extending along the first direction, the dielectric fin disposed between the first and second semiconductor fins;
- forming a first dummy gate structure that extends along a second direction perpendicular to the first direction and straddles the first semiconductor fin, the dielectric fin, and the second semiconductor fin;
- forming a first pair of source/drain regions in the first semiconductor fin on sides of the first dummy gate structure and a second pair of source/drain regions in the second semiconductor fin on sides of the first dummy gate structure;
- overlaying the first pair of source/drain regions and the second pair of source/drain regions with a dielectric layer;
- removing the dielectric fin;
- and
- depositing a protection layer over the dielectric layer to form an air void separating the first pair of source/drain regions and the second pairs of source/drain regions, wherein the air void partially extends into the substrate.
Dependencies are inferred from the claim text.