Semiconductor device and method for manufacturing the same

A method, comprising:

• forming a plurality of strip structures within a first cell, wherein the plurality of strip structures extend along a first direction and are separated from each other along a second direction different from the first direction, and odd-number strip structures of the plurality of strip structures partially overlap with a first serpentine forbidden portion abutting a first boundary between the first cell and a second cell;
• forming a first via within a first region of the second cell, wherein three sides of the first region abut the first serpentine forbidden portion;
• and
• forming a second via that is within the first cell and outside the first serpentine forbidden portion.

A method, comprising:

• forming at least one first via in a first region abutting a plurality of forbidden regions;
• forming at least one second via in a second region that is different from the first region and abuts the plurality of forbidden regions;
• and
• forming a plurality of conductive structures, wherein one of the plurality of conductive structures is coupled to the at least one second via;
• wherein the plurality of forbidden regions are arranged on two sides of a cell boundary.