Redistribution Lines Having Nano Columns and Method Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hao Tsai, Ming-Da Cheng, Wen-Hsiung Lu, Hsu-Lun Liu, Kai-Di Wu, Su-Fei Lin
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hao Tsai, Ming-Da Cheng, Wen-Hsiung Lu, Hsu-Lun Liu, Kai-Di Wu, Su-Fei Lin
Estimating the term…
A method includes forming a seed layer over a first conductive feature of a wafer, forming a patterned plating mask on the seed layer, and plating a second conductive feature in an opening in the patterned plating mask. The plating includes performing a plurality of plating cycles, with each of the plurality of plating cycles including a first plating process performed using a first plating current density, and a second plating process performed using a second plating current density lower than the first plating current density. The patterned plating mask is then removed, and the seed layer is etched.
A device comprising:
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