Graphene liners and caps for semiconductor structures

A method, comprising:

• forming a recess in a dielectric layer above a first conductive structure;
• forming at least one liner material on sidewalls and a bottom surface of the recess;
• forming a first graphene layer over the at least one liner material;
• forming a copper conductive structure in the recess;
• forming a layer of cobalt on a top surface of the copper conductive structure;
• and
• forming a second graphene layer on the layer of cobalt.

A semiconductor structure, comprising:

• a copper conductive structure formed in a dielectric layer and below at least one etch stop layer (ESL);
• at least one liner material adjacent to sidewalls of the copper conductive structure and at an interface between the copper conductive structure and a first conductive structure below the copper conductive structure;
• and
• a bi-layer cap at an interface between the copper conductive structure and a second conductive structure above the copper conductive structure, wherein the bi-layer cap comprises a first layer adjacent to the copper conductive structure and a second layer of graphene adjacent to the first layer and at the interface between the copper conductive structure and the second conductive structure.