Cell having stacked pick-up region

An integrated circuit comprising:

• two parallel active zones extending in a first direction that includes a first-type active zone located in a second-type well and a second-type active zone located in a first-type well, wherein each of the first-type active zone and the second-type active zone includes a channel region between a source or a drain aligned along the first direction, and wherein the first-type active zone having channel regions is separated from the second-type active zone having channel regions along a second direction that is different from the first direction;
• a second-type pick-up region located in the second-type well, wherein a second-type dopant concentration of the second-type pick-up region is higher than a second-type dopant concentration of the second-type well;
• a first-type pick-up region located in the first-type well, wherein a first-type dopant concentration of the first-type pick-up region is higher than a first-type dopant concentration of the first-type well;
• a first power rail and a second power rail extending in the first direction, wherein the first power rail, the first-type active zone, the second-type active zone, and the second power rail are arranged along the second direction such that the first-type active zone is between the first power rail and the second-type active zone while the second-type active zone is between the first-type active zone and the second power rail;
• a first conductive segment extending in the second direction, wherein the second-type pick-up region is conductively connected to the first power rail with the first conductive segment;
• and
• an analog cell including a circuit having transistors in the first-type active zone and the second-type active zone.

An integrated circuit comprising:

• two parallel active zones extending in a first direction that includes a p-type active zone located in an n-type well and an n-type active zone located in a p-type well, wherein each of the p-type active zone and the n-type active zone includes a channel region between a source or a drain aligned along the first direction, and wherein the p-type active zone having channel regions is separated from the n-type active zone having channel regions along a second direction that is different from the first direction;
• an n-type pick-up region located in the n-type well and forming a first guard-ring surrounding the p-type active zone, wherein an n-type dopant concentration of the n-type pick-up region is higher than an n-type dopant concentration of the n-type well;
• a p-type pick-up region located in the p-type well and forming a second guard-ring surrounding the n-type active zone, wherein a p-type dopant concentration of the p-type pick-up region is higher than a p-type dopant concentration of the p-type well;
• a first power rail and a second power rail extending in the first direction, wherein the first power rail, the p-type active zone, the n-type active zone, and the second power rail are arranged along the second direction such that the p-type active zone is between the first power rail and the n-type active zone while the n-type active zone is between the p-type active zone and the second power rail;
• and
• a first conductive segment and a second conductive segment extending in the second direction, wherein the n-type pick-up region is conductively connected to the first power rail with the first conductive segment, and the p-type pick-up region is conductively connected to the second power rail with the second conductive segment.