Semiconductor device and method of forming the same

A semiconductor device, comprising:

• a first redistribution layer (RDL) structure comprising a first polymer layer, a first conductive pattern, and an adhesion promoter layer;
• a first die over the first RDL structure;
• a through via over the first RDL structure, the through via being adjacent the first die, wherein the through via is physically separated from the first conductive pattern by a portion of the first polymer layer between the through via and the first conductive pattern;
• and
• an encapsulant over the first RDL structure, the encapsulant being between the first die and the through via, wherein the adhesion promoter layer extends between a sidewall of the through via and the encapsulant.

A method of forming a semiconductor device, the method comprising:

• forming a first conductive pattern on a first polymer layer;
• forming a first adhesion promoter layer on the first conductive pattern, wherein the first adhesion promoter layer is in direct contact with the first conductive pattern;
• forming a second polymer layer on the first polymer layer, wherein the second polymer layer is in direct contact with the first adhesion promoter layer;
• placing a first die over a first side of the first polymer layer;
• and
• placing a second die at a second side of the first polymer layer, the second side of the first polymer layer being opposite the first side of the first polymer layer, wherein the second die is electrically connected to the first die through the first conductive pattern.