Semiconductor device and method of forming the same
AssigneesChee-Wee LIU, Mediatek Inc.
InventorsMing-Tzong YANG, Hsien-Hsin LIN, Wen-Kai WAN, Chia-Che CHUNG, Chee-Wee LIU
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Abstract
A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.
Claims18
A semiconductor device, comprising:
- a heat dissipation substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1;
- and
- a device layer disposed on the heat dissipation substrate, wherein the device layer comprises a transistor
A method of forming a semiconductor device, comprising:
- providing a base substrate;
- forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1;
- forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor;
- and
- removing the base substrate.
A method of forming a semiconductor device, comprising:
- providing a base substrate;
- forming a device layer on the base substrate, wherein the device layer comprises a transistor;
- removing the base substrate;
- and
- attaching the device layer to a heat dissipation substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1and 1200 Wm−1K−1.
Dependencies are inferred from the claim text.