Power semiconductor device and power conversion device
AssigneeMitsubishi Electric Corporation
InventorsTomohisa YAMANE, Takashi NISHIMURA, Hiroshi KOBAYASHI, Tatsushi MORISADA, Masaru FUKU
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AssigneeMitsubishi Electric Corporation
InventorsTomohisa YAMANE, Takashi NISHIMURA, Hiroshi KOBAYASHI, Tatsushi MORISADA, Masaru FUKU
Estimating the term…
A power semiconductor device includes a power module unit, an adhesive sheet, a support member, and a flow prevention frame. The adhesive sheet is bonded to the power module unit. The support member is connected to the power module unit with the adhesive sheet therebetween. The flow prevention frame is sandwiched between the power module unit and the support member, and is placed around the adhesive sheet. The adhesive sheet has an outer peripheral surface adjoining an inner peripheral surface of the flow prevention frame. A value obtained by dividing a maximum value of the internal pressure on the outer peripheral surface by a minimum value of the internal pressure is less than or equal to 10.
A power semiconductor device comprising:
Dependencies are inferred from the claim text.