High-density resistive random-access memory array with self-aligned bottom electrode contact

A memory device, comprising:

• a plurality of electrically conductive structures embedded in an interconnect dielectric material layer;
• a bottom electrode selectively grown over, and electrically connected to, each of the electrically conductive structures, wherein the bottom electrode above an electrically conductive structure is separated from the bottom electrode above another electrically conductive structure by a first dielectric filling layer, a shape of an uppermost surface of the bottom electrode including a semi-circular shape;
• a resistive random-access memory pillar disposed above the bottom electrode;
• a second dielectric filling layer dispose above the first dielectric filling layer and above the resistive random-access memory pillar;
• and
• a top metal contact electrically connected to the resistive random-access memory pillar.

A method of forming a memory device, comprising:

• forming a plurality of electrically conductive structures within an interconnect dielectric material layer;
• selectively growing a bottom electrode above each of the electrically conductive structures, a shape of an uppermost surface of the bottom electrode including a semi-circular shape;
• forming a first dielectric filling layer above the interconnect dielectric material layer and the bottom electrode on each of the electrically conductive structures;
• conducting a planarization process until the uppermost surface of the bottom electrode is exposed;
• and
• forming a resistive random-access memory stack above the exposed uppermost surface of the bottom electrode and the first dielectric filling layer.