Via Structures

A semiconductor device, comprising:

• source features and drain features disposed over a substrate;
• source contacts and drain contacts disposed over the source features and drain features, respectively;
• source vias disposed over the source contacts, wherein the source vias and the source contacts have first contact surface areas;
• drain vias disposed over the drain contacts, wherein the drain vias and the drain contacts have second contact surface areas, wherein each of the first contact surface areas is greater than each of the second contact surface areas
• a source via metal line having a width along a first direction, the source via metal line contacting multiple source vias by extending lengthwise along a second direction perpendicular to the first direction;
• and
• a drain via metal line having a width along the first direction, the drain via metal line contacting multiple drain vias by extending lengthwise along the second direction.

A semiconductor device, comprising:

• a source feature and a drain feature disposed over a substrate;
• a source contact and a drain contact landing on the source feature and the drain feature, respectively;
• a source via and a drain via landing on the source contact and the drain contact, respectively;
• and
• a source via metal line and a drain via metal line disposed over and directly connected to the source via and the drain via, respectively,
• wherein the source via is larger than the drain via,
• wherein along a first direction, a portion of the source contact extends beyond an outer edge of the source feature, a portion of the source via extends beyond an outer edge of the source contact, and a portion of the source via metal line extends beyond an outer edge of the source via.