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US 2023/0147275 A1Published application
Memory comprising conductive ferroelectric material in series with dielectric material
AssigneeIntel Corporation
InventorsCharles Kuo, Kaan Oguz
Life of this patent
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Abstract
A memory device including a three dimensional crosspoint memory array comprising a plurality of memory cells, wherein a memory cell of the plurality of memory cells comprises a conductive ferroelectric material and wherein the conductive ferroelectric material is in series with a dielectric material.
Claims21
A memory device including:
- a three dimensional crosspoint memory array comprising a plurality of memory cells, wherein a memory cell of the plurality of memory cells comprises a conductive ferroelectric material and wherein the conductive ferroelectric material is in series with a dielectric material.
A method comprising:
- forming a three dimensional crosspoint memory array comprising a plurality of memory cells, wherein a memory cell of the plurality of memory cells comprises a conductive ferroelectric material and wherein the conductive ferroelectric material is in series with a dielectric material.
A system comprising:
- a storage device controller;
- and
- at least one memory chip coupled to the storage device controller, wherein a memory chip comprises:
- a three dimensional crosspoint memory array comprising a plurality of memory cells, wherein a memory cell of the plurality of memory cells comprises a conductive ferroelectric material and wherein the conductive ferroelectric material is in series with a dielectric material.
1 more element
Dependencies are inferred from the claim text.