Method of manufacturing semiconductor structure, semiconductor structure and memory

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate;
• forming a first semiconductor layer on the substrate, wherein the first semiconductor layer comprises a first trench region and a to-be-doped region on two opposite sides of the first trench region, and the first trench region and the to-be-doped region are arranged in a direction parallel to a surface of the substrate;
• forming a word line, wherein the word line surrounds a sidewall surface of a part of the first semiconductor layer in the first trench region, and at least a part of a projection of a part of the first semiconductor layer in the to-be-doped region on the surface of the substrate coincides with a projection of the word line on the surface of the substrate;
• forming a doping body portion, wherein the doping body portion comprises first dopant ions, and the doping body portion contacts an end surface of the to-be-doped region away from the first trench region;
• and
• performing an annealing, such that the first dopant ions diffuse to the to-be-doped region, the to-be-doped region is converted into a doped region, and along a direction that the doped region points to the first trench region, a concentration of dopant ions in the doped region is decreased progressively.