Semiconductor device structure with silicide portion between conductive plugs
AssigneeNanya Technology Corporation
InventorChun-Cheng LIAO
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Abstract
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer, and a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug. The semiconductor device structure further includes a silicide portion disposed between the first conductive plug and the second conductive plug.
Claims19
A semiconductor device structure, comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a second dielectric layer disposed over the first dielectric layer;
- a first conductive plug disposed in the first dielectric layer;
- a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug;
- and
- a silicide portion disposed between the first conductive plug and the second conductive plug.
A semiconductor device structure, comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a polysilicon layer disposed over the first dielectric layer;
- a second dielectric layer disposed over the polysilicon layer;
- a first conductive plug disposed in the first dielectric layer;
- a silicide portion disposed in the polysilicon layer and covering the first conductive plug;
- and
- a second conductive plug disposed in the second dielectric layer and covering the silicide portion.
Dependencies are inferred from the claim text.