Lateral diffusion metal oxide semiconductor device and manufacturing method therefor

A method for fabricating a laterally diffused metal-oxide-semiconductor (LDMOS) device, comprising:

• step A, obtaining a substrate with a drift region, wherein the drift region has a first conductivity type and is formed on the substrate which has a second conductivity type, and wherein the first conductivity type is opposite to the second conductivity type;
• step B, forming a plurality of implantation holes in the drift region by etching;
• step C, implanting dopant ions at a bottom of each of the plurality of implantation holes;
• step D, filling doped polysilicon into the implantation holes, wherein the doped polysilicon and the dopant ions have opposite conductivity types;
• step E, implanting dopant ions at a top of the doped polysilicon in each implantation hole that is located in the drift region, wherein the doped polysilicon and the dopant ions have opposite conductivity types;
• repeating steps D and E for a predetermined number of times such that each implantation hole is filled up with the doped polysilicon, wherein the dopant ions implanted into the drift region by different implantations form doped regions with different depths;
• and
• step F, forming doped bars extending in a lengthwise direction of a conductive channel by performing a thermal treatment to cause the doped regions at a same depth to diffuse and merge in the lengthwise direction of the conductive channel.