Non-volatile memory device including multi-stack memory block and operating method thereof

An operating method of a non-volatile memory device, the non-volatile memory device comprising first to third memory blocks, each of the first to third memory blocks comprising a first sub-block, a second sub-block, and a dummy block, the first sub-block comprising a first plurality of memory cells, the second sub-block comprising a second plurality of memory cells, and the dummy block comprising a plurality of dummy cells, the second sub-block being arranged on the first sub-block, and the dummy block being arranged between the first sub-block and the second sub-block, the method comprising:

• receiving a command for the first memory block to perform a first operation;
• and
• in response to the first memory block satisfying a block reset condition, performing a block reset operation by the first memory block,
• wherein the performing of the block reset operation comprises
• applying a turn-on voltage to dummy word lines included in the dummy block of the first memory block,
• transferring, to the second memory block, data previously programmed in the first sub-block or the second sub-block of the first memory block,
• performing an erase operation entirely on the first memory block, and
• re-programming the dummy cells of the first memory block.

A semiconductor apparatus comprising:

• a memory controller configured to generate any one of a program command, a read command, or an erase command;
• and
• a non-volatile memory device which is operated under control by the memory controller, the non-volatile memory device comprising a first memory block and a second memory block,
• wherein the memory controller is configured to determine whether the first memory block satisfies a block reset condition, and
• the non-volatile memory device is configured to, in response to the first memory block satisfying the block reset condition, apply a turn-on voltage to word lines of dummy cells included in the first memory block, transfer data previously programmed in the first memory block to the second memory block, then erase the first memory block, and re-program the dummy cells of the first memory block.