Method of programming non-volatile memory device

A method of programming a non-volatile memory device, the method comprising:

• during a first program execution period for data, performing a first program operation on first memory cells connected to a first selected word line by applying a first program voltage to the first selected word line;
• performing the first program operation on second memory cells connected to a second selected word line adjacent to the first selected word line;
• during a word line setup period following performing of the first program operation on the second memory cells, applying a first bias voltage to the first selected word line and applying a second bias voltage higher than the first bias voltage to the second selected word line;
• and
• during a second program execution period for the data, performing a second program operation on the first memory cells by applying a second program voltage to the first selected word line.

A method of programming a non-volatile memory device, the method comprising:,

• applying a precharge voltage to a common source line during a channel initialization period;
• during a bit line setup period, applying a first voltage to a selected word line and a first word line disposed above the selected word line and applying a second voltage lower than the first voltage to a second word line disposed above the first word line, wherein a program operation is performed on the first word line and the second word line before the bit line setup period;
• applying a third voltage lower than the first voltage and lower than the second voltage to the selected word line, the first word line and the second word line during a word line setup period;
• and
• performing a program operation on memory cells connected to the selected word line during a program execution period,
• wherein the channel initialization period and the bit line setup period are substantially a same time period.