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US 2023/0145031 A1Published application
Semiconductor structure and method for forming semiconductor structure, stacked structure, and wafer stacking method
AssigneeChangxin Memory Technologies, Inc.
InventorHua HU
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Abstract
A semiconductor structure, a method for forming a semiconductor structure, a stacked structure, and a wafer stacking method are provided. The semiconductor structure includes: a semiconductor substrate; a first dielectric layer on a surface of a semiconductor substrate; a top metal layer, in which the top metal layer is located in the first dielectric layer, and the top metal layer penetrates through the first dielectric layer; and a buffer layer located between the top metal layer and the first dielectric layer.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate;
- a first dielectric layer on a surface of a semiconductor substrate;
- a top metal layer, wherein the top metal layer is located in the first dielectric layer, and the top metal layer penetrates through the first dielectric layer;
- and
- a buffer layer located between the top metal layer and the first dielectric layer.
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A method for manufacturing a semiconductor structure, comprising:
- providing a semiconductor substrate, wherein a first dielectric layer is formed on a surface of the semiconductor substrate, the first dielectric layer comprises a first trench, and a depth of the first trench is less than a thickness of the first dielectric layer;
- forming an initial buffer layer on a surface of the first dielectric layer and an inner wall of the first trench;
- removing a portion of the initial buffer layer and a portion of the first dielectric layer at a bottom of the first trench to form a second trench penetrating through the first dielectric layer, and a buffer layer;
- and
- filling a metal material in the first trench and the second trench to form a top metal layer.
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Dependencies are inferred from the claim text.