Three-dimensional memory and fabricating method thereof

Abstract

The disclosure relates to a three-dimensional memory device and a fabricating method thereof. The disclosed method of forming a three-dimensional memory can comprise: forming a first stack structure on a substrate and a connecting layer on the first stack structure; forming an opening through the connecting layer and a first channel hole through the first stack structure, wherein the opening is interconnected with the first channel hole; etching the connecting layer using a dry etching process to enlarge the opening, and forming a filling structure in the enlarged opening and the first channel hole. A bottom aperture of the enlarged opening is larger than a top aperture of the first channel hole. The dry etching process comprises at least a first stage dry etching and a second stage dry etching using different Radio Frequency (RF) powers.

Dependencies are inferred from the claim text.