Nitride-based semiconductor device and method for manufacturing the same

A nitride-based semiconductor device, comprising:

• a first nitride-based semiconductor layer doped to a first conductivity type;
• a second nitride-based semiconductor layer disposed over the first nitride-based semiconductor layer;
• a lattice layer disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type, wherein the lattice layer comprises a plurality of first III-V layers and a plurality of second III-V layers alternatively stacked, each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region, the high resistivity region comprises more metal oxides than the current aperture so as to achieve a resistivity higher than that of the current aperture, wherein interfaces formed between the high resistivity regions and the current apertures among the first III-V layers align with each other;
• a third nitride-based semiconductor layer disposed over the second nitride-based semiconductor layer;
• a first source electrode and a second electrode disposed over the third nitride-based semiconductor layer;
• and
• a gate electrode disposed over the third nitride-based semiconductor layer and between the first and second source electrodes, wherein the gate electrode aligns with the current aperture.