Epitaxial oxide materials, structures, and devices

Abstract

The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, including: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1-x1-y1)(Alq1Ga1-q1)2O4 wherein 0≤x1≤1, 0≤y1≤1 and 0≤q1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1-x2-y2)(Alq2Ga1-q2)2O4 wherein 0≤x2≤1, 0≤y2≤1 and 0≤q2≤1. In some cases, at least one condition selected from x1≠x2, y1≠y2, and q1≠q2 is satisfied.

Dependencies are inferred from the claim text.