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US 2023/0143678 A1Published application
Method and system for depositing boron nitride using pulsed chemical vapor deposition
AssigneeASM IP Holding B.V.
InventorsRené Henricus Jozef Vervuurt, Timothee Blanquart
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Abstract
Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a pulsed CVD process.
Claims20
A cyclic deposition method of depositing a boron nitride film on a surface of a substrate, the method comprising:
- providing the substrate in a reaction chamber;
- providing a reactant into the reaction chamber;
- forming a plasma using the reactant;
- and
- pulsing a precursor into the reaction chamber to thereby form the boron nitride film,
- wherein the precursor comprises boron and nitrogen.
3 more elements
Dependencies are inferred from the claim text.