US 2023/0142939 A1Published application

MANUFACTURING METHOD OF SiC SUBSTRATE

AssigneeDisco Corporation

InventorKatsuyoshi KOJIMA

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method of manufacturing a SiC substrate includes grinding a sliced SiC substrate on a side of its front surface on which a Si-face is exposed, grinding the sliced SiC substrate on a side of its back surface on which a C-face is exposed, such that the back surface has an arithmetic mean height Sa of 1 nm or less, and then polishing the sliced SiC substrate on the side of only the front surface and not on the side of the back surface. In a case where the side of the back surface is ground as described above, the SiC substrate can be prevented from being warped even if the side of the back surface is not polished. This can shorten the manufacturing lead time for the SiC substrate used for the manufacture of power devices or the like and can also reduce the manufacturing cost.

Claims2

Dependent claims

A manufacturing method of a silicon carbide substrate, comprising:

a separation step of separating a sliced silicon carbide substrate from a silicon carbide ingot such that a silicon-face is exposed on a front surface and a carbon-face is exposed on a back surface;
a grinding step of, after the separation step, grinding the sliced silicon carbide substrate on both a side of the front surface and a side of the back surface of the sliced silicon carbide substrate;
and
a polishing step of, after the grinding step, polishing the sliced silicon carbide substrate only on the side of the front surface and not on the side of the back surface,
wherein the grinding step includes
a first grinding step of grinding the sliced silicon carbide substrate on the side of the front surface, and
a second grinding step of grinding the sliced silicon carbide substrate on the side of the back surface, and
in the second grinding step, the sliced silicon carbide substrate is ground on the side of the back surface such that the back surface has an arithmetic mean height Sa of 1 nm or less.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/054,204Filed 10 Nov 2022
Priority: JP 2021-18390711 Nov 2021
Published: 11 May 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

B24B 7/228
For grinding inorganic material, e.g. stone, ceramics, porcelain: for grinding thin, brittle parts, e.g. semiconductors, wafers
B24B 9/065
Of non-metallic inorganic material, e.g. stone, ceramics, porcelain: of thin, brittle parts, e.g. semiconductors, wafers
B24B 37/08
Characterised by the movement of the work or lapping tool: for double side lapping
B24B
Machines, devices, or processes for grinding or polishing

Family

No related US applications are recorded in the indexed filing history.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key