Method for preparing semiconductor device structure with silicide portion between conductive plugs
AssigneeNanya Technology Corporation
InventorCHUN-CHENG LIAO
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Abstract
A method for preparing a semiconductor device structure includes forming a first dielectric layer over a semiconductor substrate; forming a first conductive plug in the first dielectric layer; forming a polysilicon layer covering the first dielectric layer and the first conductive plug; transforming a portion of the polysilicon layer into a silicide portion; forming a second conductive plug directly over the silicide portion; and forming a second dielectric layer surrounding the second conductive plug.
Claims11
A method for preparing a semiconductor device structure, comprising:
- forming a first dielectric layer over a semiconductor substrate;
- forming a first conductive plug in the first dielectric layer;
- forming a polysilicon layer covering the first dielectric layer and the first conductive plug;
- transforming a portion of the polysilicon layer into a silicide portion;
- forming a second conductive plug directly over the silicide portion;
- and
- forming a second dielectric layer surrounding the second conductive plug.
The method for preparing a semiconductor device structure of claim 20, wherein the transforming includes performing a heat treatment process on the polysilicon layer.
The method for preparing a semiconductor device structure of claim 20, wherein the portion of the polysilicon layer is in direct contact with the first conductive plug.
The method for preparing a semiconductor device structure of claim 20, wherein the silicide portion is entirely covered by the second conductive plug before the second dielectric layer is formed.
The method for preparing a semiconductor device structure of claim 20, wherein the second dielectric layer is formed over and in direct contact with a remaining portion of the polysilicon layer after the second conductive plug is formed.
The method for preparing a semiconductor device structure of claim 20, further comprising:
- forming a first opening penetrating through the first dielectric layer to expose the semiconductor substrate;
- forming a lining material over the first dielectric layer and lining the first opening;
- forming a conductive material over the lining material and filling the first opening;
- and
- planarizing the lining material and the conductive material to form a liner separating the first conductive plug from the first dielectric layer and the semiconductor substrate.
The method for preparing a semiconductor device structure of claim 25, wherein the liner is covered by the polysilicon layer before the portion of the polysilicon layer is transformed.
The method for preparing a semiconductor device structure of claim 25, wherein the liner is covered by the silicide portion after the portion of the polysilicon layer is transferred.
The method for preparing a semiconductor device structure of claim 25, further comprising:
- forming a second opening penetrating through the first dielectric layer, the polysilicon layer and the second dielectric layer to expose the semiconductor substrate;
- and
- forming a third conductive plug in the second opening.
The method for preparing a semiconductor device structure of claim 28, wherein the first opening is in a pattern-dense region, and the second opening is in a pattern-loose region.
The method for preparing a semiconductor device structure of claim 28, wherein a width of the second opening is greater than a width of the first opening.
Dependencies are inferred from the claim text.