Substrate processing device and method

A device for processing a substrate, the device comprising:

• a chamber;
• a substrate supporting unit provided inside the chamber and configured to support the substrate provided inside the chamber;
• a gas distribution unit provided inside the chamber to face the substrate supporting unit and configured to distribute a process gas toward the substrate supporting unit;
• a first temperature control unit installed in a central region of the gas distribution unit and configured to increase or decrease a temperature of the central region;
• and
• a second temperature control unit installed in an edge region of the gas distribution unit and configured to increase a temperature of the edge region.

A method for processing a substrate, the method comprising:

• depositing a thin film on the substrate in a chamber in which a gas distribution unit is provided;
• increasing a temperature of a central region of the gas distribution unit at a first temperature increase rate;
• increasing a temperature of an edge region of the gas distribution unit at a second temperature increase rate higher than the first temperature increase rate;
• and
• supplying a cleaning gas into the chamber to clean the chamber.