Three-dimensional memory and manufacturing method thereof

Abstract

The present disclosure relates to a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory includes: a stack structure comprising a plurality of alternately stacked gate layers and dielectric layers; a plurality of channel structures vertically penetrating the stack structure; a first gate line slit structure extending along a first horizontal direction and dividing the plurality of channel structures into two memory blocks, wherein the first gate line slit structure is partitioned by a plurality of first isolation regions into a plurality of first gate line slit sub-structures; and a plurality of first connection structures each connecting, along the first horizontal direction, adjacent first gate line slit sub-structures partitioned by one first isolation region.

Dependencies are inferred from the claim text.