Fused quartz crucible for producing silicon crystals, and method for producing a fused quartz crucible

A fused quartz crucible for pulling a single crystal of silicon according to the Czochralski technique, comprising:

• an inner side on which there is located an inner layer of fused quartz, forming a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible during a crystal pulling, brings about crystallization of fused quartz to form β-cristobalite, wherein the concentration C of synthetically obtained SiO2 at a distance d from the surface is greater than the concentration of synthetically obtained SiO2 at a distance d2 from the surface, where d2 is greater than d, and the concentration C of synthetically obtained SiO2 as a function of the distance d is subject to the following relationships:
• C[%]<=100−(d[mm]−0.25)×30 and
• C[%]>=100−(d[mm]+0.25)×80.