Semiconductor device and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a plurality of first transistors on a first substrate;
• forming a plurality of second transistors on a second substrate;
• forming a plurality of electrode layers that are separated from each other in the first direction, the plurality of electrode layers being either above the first transistors on the first substrate or above the second transistors on the second substrate;
• forming a plurality of plugs on the plurality of electrode layers;
• forming a plurality of columnar portions extending in the first direction through the plurality of electrode layers, each columnar portion including a semiconductor layer and a charge storage layer between the semiconductor layer and the plurality of electrode layers;
• and
• bonding the first substrate and the second substrate together, wherein
• the plurality of first transistors are electrically connected to the plurality of plugs, and
• the plurality of second transistors are electrically connected to the plurality of columnar portions.