Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• a substrate, having a frontside surface and a backside surface opposite to the frontside surface and connected to the frontside surface by tapered sidewalls of the substrate;
• a barrier layer, extending on the frontside surface and over the tapered sidewalls of the substrate;
• a seed layer, extending on the barrier layer;
• a patterned conductive trace, comprising a routing pattern extending on a section of the seed layer disposed over the frontside surface and a routing via formed as a single piece with the routing pattern and extending on a section of the seed layer disposed over the tapered sidewalls;
• and
• a conductive block, extending over the backside surface and electrically connected to the patterned conductive trace,
• wherein sections of the barrier layer and the seed layer are disposed between the conductive block and the routing via.

A manufacturing method of a semiconductor package, comprising:

• sputtering a first barrier material on a substrate having through holes extending from a frontside surface to a backside surface, wherein the first barrier material is sputtered towards the frontside surface;
• sputtering a first seed material on the sputtered first barrier material towards the frontside surface;
• bonding a backside film to the backside surface of the substrate, whereby the through holes are blocked at one end by the backside film;
• plating a first conductive material on the sputtered seed material after the backside film is bonded to the substrate, whereby the plated first conductive material is formed in the through holes and over the frontside surface of the substrate;
• and
• removing the backside film after the first conductive material is plated.