Display device using semiconductor light emitting element, and method for manufacturing same

A method of manufacturing a display device, the method comprising:

• sequentially stacking a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a growth substrate;
• etching a portion of the second conductivity type semiconductor layer and the active layer stacked on the first conductivity type semiconductor layer so that a portion of the first conductivity type semiconductor layer is exposed;
• etching a portion of the first conductivity type semiconductor layer to form an individual semiconductor light emitting diode;
• and
• forming a recessed portion in the individual semiconductor light emitting diode by etching a portion of the first conductivity type semiconductor layer,
• wherein the first conductivity type semiconductor layer includes a plurality of first semiconductor layers and a plurality of second semiconductor layers that are alternately stacked, and
• wherein the forming a recessed portion in the individual semiconductor light emitting diode by etching a portion of the first conductivity type semiconductor layer is performed by etching a second semiconductor layer faster than a first semiconductor layer from among the plurality of first semiconductor layers and the plurality of second semiconductor layers.

A display device comprising:

• a board including a wiring electrode;
• and
• a plurality of semiconductor light emitting diodes electrically connected to the wiring electrode,
• wherein each of the plurality of semiconductor light emitting diodes includes:
• a first conductivity type semiconductor layer;
• a barrier layer on the first conductivity type semiconductor layer;
• an active layer on the barrier layer;
• and
• a second conductivity type semiconductor layer on the active layer,
• wherein at least one of the barrier layer and the first conductivity type semiconductor layer includes a plurality of recessed portions in a plane direction of the at least one of the barrier layer and the first conductivity type semiconductor layer.