Methods for forming dielectric layer in forming semiconductor device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYonggang Yang, Xiaohong Zhou
Life of this patent
Estimating the term…
Abstract
Methods for forming a 3D memory device are provided. A method includes the following operations. A stack structure is formed in a staircase region and an array region. A dielectric material layer is formed over the array region and the staircase region. An etch mask layer is coated over the dielectric material layer. The etch mask layer, on a first surface away from the dielectric material layer, is planarized. The dielectric material layer and a remaining portion of the etch mask layer are etched to form a dielectric layer over the staircase region and the array region.
Claims20
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a stack structure over a staircase region and an array region;
- forming a dielectric material layer over the array region and the staircase region;
- forming an etch mask layer over the dielectric material layer;
- planarizing a first surface of the etch mask layer away from the dielectric material layer;
- and
- etching the dielectric material layer and a remaining portion of the etch mask layer to form a dielectric layer over the staircase region and the array region.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a stack structure over a staircase region and an array region;
- forming a dielectric material layer over the array region and the staircase region;
- forming an etch mask portion over a portion of the dielectric material layer over the staircase region;
- and
- etching the dielectric material layer and the etch mask portion to form a dielectric layer over the staircase region and the array region.
Dependencies are inferred from the claim text.