Pellicle for an euv lithography mask and a method of manufacturing thereof

A pellicle for a reflective mask, comprising:

• a core layer having a front surface and a rear surface;
• a first capping layer disposed on the front surface of the core layer;
• a second capping layer disposed on the rear surface of the core layer;
• an anti-reflection layer disposed on the first capping layer;
• and
• a heat emissive layer disposed directly on the anti-reflection layer, wherein:
• the anti-reflection layer is made of a Mo alloy, and
• the heat emissive layer is made of a Ru alloy.

A method of manufacturing a pellicle for a reflective photo mask, the method comprising:

• forming a first capping layer over a front surface of a substrate;
• forming a core layer over the first capping layer;
• forming a second capping layer over the core layer;
• forming a protection layer over the cover layer;
• forming a hard mask layer on a back surface of the substrate;
• forming a first opening in the hard mask by patterning the hard mask;
• forming a second opening in the substrate by etching the substrate through the first opening, thereby exposing the first capping layer in the second opening;
• removing the protection layer;
• after the protection layer is removed, forming an anti-reflection layer on the first capping layer within the second opening;
• forming a barrier layer on the anti-reflection layer within the second opening;
• and
• forming a heat emissive layer on the barrier layer within the second opening.