Method for manufacturing high-density three-dimensional programmable memory

A method for manufacturing a high-density three-dimensional programmable memory, comprising:

• step 1:
• forming a base structure, wherein a predetermined number of conductive medium layers and a predetermined number of insulating medium layers are disposed in such a manner that the conductive medium layers and the insulating medium layers are alternately stacked on each other, to form the base structure;
• step 2:
• grooving the base structure, wherein the base structure is grooved to form a curved division groove penetrating from a top layer to a bottom layer on the base structure, so that the division groove divides the base structure into two interdigitated structures that are staggered and separated from each other;
• step 3:
• disposing storage medium layers required by a preset memory structure layer by layer on an inner wall of the division groove;
• step 4:
• filling a core medium in the division groove to form a core medium layer;
• step 5:
• etching, through a mask etching process, to form deep holes along the division groove filled with the core medium, wherein the deep holes truncate the core medium in the division groove, to form a predetermined number of core medium blocks that are distributed along a long-side direction of the division groove and that are independent of each other, and each core medium block is still connected to the two interdigitated structures through the storage medium layer;
• and
• step 6:
• filling an insulating medium in the deep holes formed by etching in step 5.