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US 2023/0069233 A1Published application
Semiconductor devices with ferroelectric layer and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Sai-Hooi Yeong, Yu-Ming Lin, Chung-Te Lin
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Abstract
A semiconductor device is described. The semiconductor device includes a substrate and a metal layer disposed on the substrate. A seed layer is formed on the metal layer. A ferroelectric gate layer is formed on the seed layer. A channel layer is formed over the ferroelectric gate layer. The seed layer is arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a metal layer disposed on the substrate;
- a seed layer formed on the metal layer;
- a ferroelectric gate layer formed on the seed layer;
- and
- a channel layer formed over the ferroelectric gate layer, the seed layer arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a metal layer disposed on the substrate;
- a ferroelectric gate layer formed over the metal layer;
- a blocking layer disposed on the ferroelectric gate layer;
- and
- a channel layer formed on the blocking layer, the blocking layer arranged to increase the band offset between the blocking layer and the channel layer, and to reduce oxygen vacancies in the channel layer.
3 more elements
A ferroelectric semiconductor device, comprising:
- a substrate;
- a blocking layer disposed on a channel of the substrate;
- a first seed layer disposed on the blocking layer;
- a ferroelectric gate layer formed on the first seed layer;
- and an electrode formed over the ferroelectric gate layer,
- the first seed layer arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer, the blocking layer arranged to increase the band offset between the channel and the blocking layer, and to reduce oxygen vacancies between blocking layer and channel.
3 more elements
Dependencies are inferred from the claim text.