Non-self-aligned lateral bipolar junction transistors

A method of forming a structure for a lateral bipolar junction transistor, the method comprising:

• forming a raised portion of an emitter and a raised portion of a collector;
• and
• forming a base layer of a base, wherein the base layer is positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector;
• and
• forming an extrinsic base layer of the base that is stacked with the base layer, wherein the extrinsic base layer is positioned in the lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.