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US 2023/0068877 A1Published application
Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorNaofumi OHASHI
Life of this patent
Estimating the term…
Abstract
There is provided a technique that includes forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate; and removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.
Claims14
A substrate processing method, comprising:
- forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate;
- and
- removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.
A substrate processing apparatus comprising:
- a process chamber in which a substrate is processed;
- a modifying gas supplier configured to supply a modifying gas to the process chamber;
- a removal gas supplier configured to supply a removal gas activated by plasma into the process chamber;
- a protective-film-forming gas supplier configured to supply a protective-film-forming gas into the process chamber;
- and
- a controller configured to be capable of:
- forming a modified film by supplying the modifying gas from the modifying gas supplier to modify an unmasked deposited film on a substrate;
- and
- removing the modified film, including supplying the removal gas from the removal gas supplier and supplying the protective-film-forming gas from the protective-film-forming gas supplier at least at the same time.
6 more elements
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate;
- and
- removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.
Dependencies are inferred from the claim text.