Back to results
US 2023/0068458 A1Published application
Introducing Fluorine To Gate After Work Function Metal Deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Wen Hsieh, Pei Ying Lai
Life of this patent
Estimating the term…
Abstract
A gate dielectric structure is formed over a channel structure. One or more work function (WF) metal layers of a metal gate are formed over the gate dielectric structure. The one or more WF metal layers are treated with a fluorine-containing material. One or more processes are performed to cause fluorine from the fluorine-containing material to diffuse at least partially into the gate dielectric structure.
Claims20
A method, comprising:
- forming a gate dielectric structure over a channel structure;
- forming one or more work function (WF) metal layers of a metal gate over the gate dielectric structure;
- treating the one or more WF metal layers with a fluorine-containing material;
- and
- performing one or more processes to cause fluorine from the fluorine-containing material to diffuse at least partially into the gate dielectric structure.
2 more elements
A method, comprising:
- forming a gate dielectric of a gate structure over a channel of a FinFET device or a gate-all-around (GAA) device;
- forming a work function (WF) metal of a gate electrode of the gate structure over the gate dielectric;
- and
- after the WF metal has been formed, introducing fluorine to the gate dielectric via one or more fluorine treatment processes and one or more thermal processes, such that a peak concentration of fluorine within the gate structure occurs within the gate dielectric.
1 more element
A device, comprising:
- a gate dielectric of a transistor disposed over a channel of the transistor;
- a work function (WF) metal of a gate electrode of the transistor disposed over the gate dielectric;
- and
- a fill metal of the gate electrode disposed over the WF metal;
- wherein:
- the WF function metal has a first concentration of fluorine;
- the gate dielectric has a second concentration of fluorine;
- and
- the second concentration is substantially greater than the first concentration.
6 more elements
Dependencies are inferred from the claim text.