Compact static random-access memory structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRuey-Wen Chang, Feng-Ming Chang, Ping-Wei Wang
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Abstract
A static random-access memory (SRAM) structure and the manufacturing method thereof are disclosed. An exemplary SRAM structure includes a first source/drain (S/D) feature and a second S/D feature formed in an interlayer dielectric layer (ILD) of a bit cell region of the SRAM structure, a frontside via electrically connecting to the first S/D feature, and a first backside via electrically connecting to the second S/D feature. The first S/D feature and the second S/D feature are of a same type.
Claims20
A static random-access memory (SRAM) structure comprising:
- a first source/drain (S/D) feature and a second S/D feature formed in an interlayer dielectric layer (ILD) of a bit cell region of the SRAM structure, wherein the first S/D feature and the second S/D feature are of a same type;
- a frontside via electrically connecting to the first S/D feature;
- and
- a first backside via electrically connecting to the second S/D feature.
A static random-access memory (SRAM) structure comprising:
- a first source/drain (S/D) feature and a second S/D feature formed in a bit cell region of the SRAM structure, wherein the first S/D feature and the second S/D feature are of different types;
- a first backside via electrically connecting to the first S/D feature;
- and
- a second backside via electrically connecting to the second S/D feature.
A method for forming a static random-access memory (SRAM) structure, comprising:
- receiving a substrate including a first region and a second region;
- forming a first semiconductor fin in the first region of the substrate and a second semiconductor fin in the second region of the substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by an isolation structure;
- forming a first source/drain (S/D) feature over the first semiconductor fin and a second S/D feature over the second semiconductor fin;
- connecting the second S/D feature to a frontside conductive feature;
- and
- connecting the first S/D feature to a first backside conductive feature.
Dependencies are inferred from the claim text.